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    ? 2000 IXYS All rights reserved 1 - 1 DSDI 60 IFAVM = 63 A VRRM = 1400-1800 V trr = 40 ns Features International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Creepage distance between leads 8.5 mm Applications Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters 6gand motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) 12mA Ultrasonic cleaners and welders 3mAAdvantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling Dimensions See DSEI 60-12 on page D5 - 27 I FAVM rating includes reverse blocking losses at T VJM, VR = 0.8 V RRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions VRSM VRRM Type V V 1400 1400 DSDI 60-14A 1600 1600 DSDI 60-16A 1800 1800 DSDI 60-18A Symbol Test Conditions Maximum Ratings I IFRMSFAVM IFRM TVJ = T T VJM C = 60 C; rectangular, d = 0.5 63 A tP < 10 s; rep. rating, pulse width limited by TVJM 800 A 100 A IFSM TVJ = 45 C; t = 10 ms (50 Hz), sine 500 A t = 8.3 ms (60 Hz), sine 540 A TVJ = 150 C; t = 10 ms (50 Hz), sine 450 A t = 8.3 ms (60 Hz), sine 480 A I2t TVJ = 45 C t = 10 ms (50 Hz), sine 1250 A2s t = 8.3 ms (60 Hz), sine 1200 A2s TVJ = 150 C; t = 10 ms (50 Hz), sine 1000 A2s t = 8.3 ms (60 Hz), sine 950 A2s T TVJ TVJMstg -40...+150 C 150 C -40...+150 C Ptot TC = 25 C 416 W Md Mounting torque 0.8...1.2 Nm Weight Symbol Test Conditions Characteristic Values typ. max. IR TVJ = 25 CVR = V T RRM VJ = 25 CVR = 0.8 ? V T RRM VJ = 125 CVR = 0.8 VRRM 0.5 mA VF IF = 70 A; T VJ = 125C 2.6 V TVJ =25C 4.1 V V r T0 T For power-loss calculations only 1.9 V TVJ = T VJM 10 m RthJC 0.4 K/W RthCK 0.25 K/W trr IF = 1 A; -di/dt = 200 A/ s; VR = 30 V; T VJ = 25 C 40 ns trr IF = 70 A; -di/dt = 500 A/ s; VR = 1000 V; 300 ns IRM TVJ = 25 C 60 A trr IF = 70 A; -di/dt = 500 A/ s; VR = 1000 V; 400 ns IRM TVJ = 125 C 85 A Super Fast Recovery Diode A C TO-247 AD C C A A = Anode, C = Cathode 036 Preliminary Data |